2N5953

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - RF

DS Breakdown Voltage-Min :

30V

Transistor Application :

AMPLIFIER

Power Dissipation-Max (Abs) :

0.36W

JESD-609 Code :

e0

Drain Current-Max (Abs) (ID) :

0.005A

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Current - Drain (Idss) @ Vds (Vgs=0) :

2.5mA @ 15V

Feedback Cap-Max (Crss) :

2 pF

Mounting Type :

Through Hole

Terminal Finish :

Tin/Lead (Sn/Pb)

Highest Frequency Band :

VERY HIGH FREQUENCY B

Operating Mode :

Depletion Mode

Number of Elements :

1

Pbfree Code :

No

Power Gain-Min (Gp) :

5dB

Input Capacitance (Ciss) (Max) @ Vds :

6pF @ 15V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

No

Operating Temperature :

-65°C~150°C TJ

Configuration :

Single

JESD-30 Code :

O-PBCY-T3

Number of Terminations :

3

FET Technology :

JUNCTION

Pin Count :

3

Power - Max :

360mW

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Qualification Status :

Not Qualified

Resistance - RDS(On) :

375Ohm

FET Type :

N-Channel

Voltage - Breakdown (V(BR)GSS) :

30V

Terminal Position :

BOTTOM

Moisture Sensitivity Level (MSL) :

Vendor Undefined

Voltage - Cutoff (VGS off) @ Id :

800mV @ 100nA

HTS Code :

8541.21.00.95