2N5771
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- Mfr.Part #
- 2N5771
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 15V 0.2A TO92-3
- Stock
- 363
- In Stock ：
- 363
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 10nA
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Supplier Device Package :
- TO-92-3
- Power - Max :
- 350mW
- Voltage - Collector Emitter Breakdown (Max) :
- 15V
- Transistor Type :
- PNP
- Packaging :
- Bulk
- Current - Collector (Ic) (Max) :
- 200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 10mA 300mV
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- Mounting Type :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheets
- 2N5771
PNP -55°C~150°C TJ 10nA TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
2N5771 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 10mA 300mV.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 50mA.The product comes in the supplier device package of TO-92-3.A 15V maximal voltage - Collector Emitter Breakdown is present in the device.
2N5771 Features
the DC current gain for this device is 50 @ 10mA 300mV
the vce saturation(Max) is 600mV @ 5mA, 50mA
the supplier device package of TO-92-3
2N5771 Applications
There are a lot of Rochester Electronics, LLC
2N5771 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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