2N5551TA
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- Mfr.Part #
- 2N5551TA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 160V 0.6A TO92-3
- Stock
- 40,593
- In Stock ：
- 40,593
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Width :
- 4.19mm
- Current Rating :
- 600mA
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Factory Lead Time :
- 17 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA 5V
- Collector Emitter Voltage (VCEO) :
- 160V
- Frequency :
- 300MHz
- Collector Base Voltage (VCBO) :
- 180V
- Weight :
- 240mg
- Collector Emitter Saturation Voltage :
- 200mV
- Power Dissipation :
- 625mW
- ECCN Code :
- EAR99
- Published :
- 2007
- Contact Plating :
- Tin
- Height :
- 5.33mm
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Length :
- 5.2mm
- Packaging :
- Tape and Box (TB)
- Transistor Application :
- AMPLIFIER
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 5mA, 50mA
- Emitter Base Voltage (VEBO) :
- 6V
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Voltage - Rated DC :
- 160V
- hFE Min :
- 80
- Max Power Dissipation :
- 625mW
- Terminal Position :
- BOTTOM
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 160V
- Gain Bandwidth Product :
- 300MHz
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Base Part Number :
- 2N5551
- Element Configuration :
- Single
- Max Collector Current :
- 600mA
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 160V
- Frequency - Transition :
- 100MHz
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 100MHz
- Datasheets
- 2N5551TA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N5551TA Overview
This device has a DC current gain of 80 @ 10mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 200mV.A VCE saturation (Max) of 200mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 160V volts can be used.A maximum collector current of 600mA volts is possible.
2N5551TA Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
2N5551TA Applications
There are a lot of ON Semiconductor
2N5551TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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