2N5551G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Collector Emitter Breakdown (Max) :

160V

Frequency - Transition :

300MHz

Transistor Type :

NPN

Terminal Finish :

TIN SILVER COPPER

Transistor Element Material :

SILICON

Transition Frequency :

100MHz

Polarity/Channel Type :

NPN

Packaging :

Bulk

Transistor Application :

AMPLIFIER

RoHS Status :

ROHS3 Compliant

Qualification Status :

COMMERCIAL

JESD-30 Code :

O-PBCY-T3

Power - Max :

625mW

Configuration :

Single

Surface Mount :

No

Pin Count :

3

Mounting Type :

Through Hole

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Terminal Position :

BOTTOM

JESD-609 Code :

e1

Current - Collector (Ic) (Max) :

600mA

Operating Temperature :

-55°C~150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Pbfree Code :

yes

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Current - Collector Cutoff (Max) :

50nA ICBO

Peak Reflow Temperature (Cel) :

260