2N5551CYTA
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- Mfr.Part #
- 2N5551CYTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 160V 0.6A TO92-3
- Stock
- 27,733
- In Stock ：
- 27,733
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Box (TB)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA 5V
- Operating Temperature :
- -55°C~150°C TJ
- Base Part Number :
- 2N5551
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Frequency - Transition :
- 100MHz
- Mounting Type :
- Through Hole
- Supplier Device Package :
- TO-92-3
- Current - Collector (Ic) (Max) :
- 600mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 5mA, 50mA
- Power - Max :
- 625mW
- Voltage - Collector Emitter Breakdown (Max) :
- 160V
- Datasheets
- 2N5551CYTA
NPN -55°C~150°C TJ 50nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N5551CYTA Overview
In this device, the DC current gain is 80 @ 10mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 200mV @ 5mA, 50mA.Product comes in the supplier's device package TO-92-3.There is a 160V maximal voltage in the device due to collector-emitter breakdown.
2N5551CYTA Features
the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
the supplier device package of TO-92-3
2N5551CYTA Applications
There are a lot of ON Semiconductor
2N5551CYTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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