2N5551BU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Width :

4.19mm

Terminal Position :

BOTTOM

ECCN Code :

EAR99

Polarity/Channel Type :

NPN

Element Configuration :

Single

Voltage - Rated DC :

160V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Length :

5.2mm

Emitter Base Voltage (VEBO) :

6V

Height :

5.33mm

Packaging :

Bulk

Collector Emitter Saturation Voltage :

200mV

hFE Min :

80

Mount :

Through Hole

Frequency - Transition :

100MHz

Lead Free :

Lead Free

Number of Terminations :

3

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Published :

2007

Frequency :

300MHz

Collector Emitter Voltage (VCEO) :

160V

Transistor Application :

AMPLIFIER

Weight :

179mg

Current Rating :

600mA

Transition Frequency :

100MHz

Transistor Type :

NPN

Mounting Type :

Through Hole

Factory Lead Time :

7 Weeks

Collector Emitter Breakdown Voltage :

160V

Radiation Hardening :

No

Number of Elements :

1

Collector Base Voltage (VCBO) :

180V

Transistor Element Material :

SILICON

Power Dissipation :

625mW

Number of Pins :

3

Contact Plating :

Tin

Base Part Number :

2N5551

Max Power Dissipation :

625mW

Gain Bandwidth Product :

300MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Max Collector Current :

600mA

Current - Collector Cutoff (Max) :

50nA ICBO