2N5551
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- Mfr.Part #
- 2N5551
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-92
- Datasheet
- Download
- Description
- TRANS NPN 160V 0.2A TO92
- Stock
- 2,924
- In Stock ：
- 2,924
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- 600mA
- Package / Case :
- TO-92
- Collector Base Voltage (VCBO) :
- 180V
- Min Operating Temperature :
- -65°C
- Polarity :
- NPN
- Transistor Application :
- AMPLIFIER
- Gain Bandwidth Product :
- 300MHz
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Breakdown Voltage :
- 160V
- Frequency - Transition :
- 300MHz
- JESD-30 Code :
- O-PBCY-T3
- JESD-609 Code :
- e0
- Collector Emitter Voltage (VCEO) :
- 200mV
- Collector Emitter Saturation Voltage :
- 200mV
- Published :
- 2012
- HTS Code :
- 8541.21.00.95
- Max Collector Current :
- 600mA
- Pbfree Code :
- No
- Number of Elements :
- 1
- Power Dissipation-Max :
- 625mW
- Packaging :
- Bulk
- Qualification Status :
- Not Qualified
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- RoHS Status :
- RoHS Compliant
- Terminal Position :
- BOTTOM
- Mount :
- Through Hole
- Transition Frequency :
- 100MHz
- Element Configuration :
- Single
- DC Current Gain-Min (hFE) :
- 80
- Max Operating Temperature :
- 150°C
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 6V
- hFE Min :
- 80
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- 2N5551
1 Elements 3 Terminations TO-92 Bulk
2N5551 Overview
Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 200mV.Single BJT transistor is recommended to keep the continuous collector voltage at 600mA in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
2N5551 Features
a collector emitter saturation voltage of 200mV
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
2N5551 Applications
There are a lot of Central Semiconductor
2N5551 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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