2N5411

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Mfr.Part #
2N5411
Manufacturer
Microchip Technology
Package / Case
TO-111-4, Stud
Datasheet
Download
Description
POWER BJT
Stock
2,142
In Stock :
2,142

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Product Type :
BJTs - Bipolar Transistors
Supplier Device Package :
TO-111
Qualification Status :
Not Qualified
Subcategory :
Transistors
JESD-30 Code :
O-MUPM-D3
Collector Current-Max (IC) :
5 A
DC Current Gain (hFE) (Min) @ Ic, Vce :
-
Mounting Type :
Stud Mount
Vce Saturation (Max) @ Ib, Ic :
600mV @ 200μA, 2mA
Current - Collector (Ic) (Max) :
5 A
Terminal Form :
Solder Lug
Package Shape :
Round
Collector-Emitter Voltage-Max :
100 V
Series :
-
Product Status :
Active
Terminal Position :
UPPER
Product Category :
Bipolar Transistors - BJT
Package / Case :
TO-111-4, Stud
Transistor Polarity :
PNP
ECCN Code :
EAR99
Configuration :
Single
Number of Terminals :
3
Current - Collector Cutoff (Max) :
-
Frequency - Transition :
-
Transistor Type :
PNP
Transistor Element Material :
SILICON
Brand :
Microchip Technology
Power - Max :
52 W
Manufacturer :
Microchip
JEDEC-95 Code :
TO-111
DC Current Gain-Min (hFE) :
40
Polarity/Channel Type :
PNP
Operating Temperature :
-65°C ~ 200°C (TJ)
Voltage - Collector Emitter Breakdown (Max) :
100 V
Number of Elements :
1
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Reach Compliance Code :
Compliant
Package :
Bulk
Technology :
Si
Surface Mount :
No
Datasheets
2N5411
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N5411 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Stud Mount, Package / Case:TO-111-4, Stud, Operating Temperature:-65°C ~ 200°C (TJ), 2N5411 pinout, 2N5411 datasheet PDF, 2N5411 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N5411 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



PNP -65°C ~ 200°C (TJ) - 1 Elements SILICON PNP TO-111-4, Stud Stud Mount

2N5411 Overview


In this device, the DC current gain is -, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 200μA, 2mA.Product comes in the supplier's device package TO-111.100 V is set as the maximum collector-emitter voltage.There is a 100 V maximal voltage in the device due to collector-emitter breakdown.

2N5411 Features


the DC current gain for this device is -
the vce saturation(Max) is 600mV @ 200μA, 2mA
the supplier device package of TO-111


2N5411 Applications


There are a lot of Microchip Technology
2N5411 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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