2N5410
- Mfr.Part #
- 2N5410
- Manufacturer
- Microchip Technology
- Package / Case
- TO-111-4, Stud
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 3,379
- In Stock :
- 3,379
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- Number of Elements :
- 1
- Configuration :
- Single
- Product Type :
- BJTs - Bipolar Transistors
- Brand :
- Microchip Technology
- Qualification Status :
- Not Qualified
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 200μA, 2mA
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Collector Current-Max (IC) :
- 5 A
- Package / Case :
- TO-111-4, Stud
- Terminal Form :
- Solder Lug
- Product Status :
- Active
- Reach Compliance Code :
- Compliant
- Manufacturer :
- Microchip
- Number of Terminals :
- 3
- Pbfree Code :
- No
- Transistor Type :
- PNP
- Current - Collector (Ic) (Max) :
- 5 A
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Package :
- Bulk
- Mounting Type :
- Stud Mount
- Terminal Position :
- UPPER
- ECCN Code :
- EAR99
- Frequency - Transition :
- -
- JESD-30 Code :
- O-MUPM-D3
- Series :
- -
- Pin Count :
- 3
- Polarity/Channel Type :
- PNP
- JEDEC-95 Code :
- TO-111
- DC Current Gain-Min (hFE) :
- 40
- Surface Mount :
- No
- Power - Max :
- 52 W
- Product Category :
- Bipolar Transistors - BJT
- Current - Collector Cutoff (Max) :
- -
- Subcategory :
- Transistors
- Supplier Device Package :
- TO-111
- Transistor Element Material :
- SILICON
- Collector-Emitter Voltage-Max :
- 80 V
- Package Shape :
- Round
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- 2N5410
PNP -65°C ~ 200°C (TJ) - 1 Elements SILICON PNP TO-111-4, Stud Stud Mount
2N5410 Overview
In this device, the DC current gain is -, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 200μA, 2mA.Product comes in the supplier's device package TO-111.80 V is set as the maximum collector-emitter voltage.There is a 80 V maximal voltage in the device due to collector-emitter breakdown.
2N5410 Features
the DC current gain for this device is -
the vce saturation(Max) is 600mV @ 200μA, 2mA
the supplier device package of TO-111
2N5410 Applications
There are a lot of Microchip Technology
2N5410 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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