2N5405
- Mfr.Part #
- 2N5405
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 41,751
- In Stock :
- 41,751
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Series :
- -
- Product Status :
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- Surface Mount :
- No
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Manufacturer :
- Microchip
- DC Current Gain-Min (hFE) :
- 20
- Voltage - Collector Emitter Breakdown (Max) :
- 100 V
- Current - Collector (Ic) (Max) :
- 5 A
- Current - Collector Cutoff (Max) :
- -
- Product Category :
- Bipolar Transistors - BJT
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Supplier Device Package :
- TO-5AA
- Brand :
- Microchip Technology / Atmel
- Operating Temperature :
- -
- Vce Saturation (Max) @ Ib, Ic :
- -
- Terminal Position :
- BOTTOM
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Package Shape :
- Round
- Collector Current-Max (IC) :
- 5 A
- Power - Max :
- 7.5 W
- Terminal Form :
- Wire
- Collector-Emitter Voltage-Max :
- 100 V
- JEDEC-95 Code :
- TO-5
- Transistor Element Material :
- SILICON
- Product Type :
- BJTs - Bipolar Transistors
- Subcategory :
- Transistors
- Reach Compliance Code :
- Compliant
- Frequency - Transition :
- -
- JESD-30 Code :
- O-MBCY-W3
- Number of Elements :
- 1
- Configuration :
- Single
- Number of Terminals :
- 3
- Package :
- Bulk
- Qualification Status :
- Not Qualified
- Datasheets
- 2N5405
PNP - - 1 Elements SILICON PNP TO-205AA, TO-5-3 Metal Can Through Hole
2N5405 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is -.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is -.This product comes in a TO-5AA device package from the supplier.A maximal collector-emitter voltage setting of 100 V is available.Device displays Collector Emitter Breakdown (100 V maximal voltage).
2N5405 Features
the DC current gain for this device is -
the vce saturation(Max) is -
the supplier device package of TO-5AA
2N5405 Applications
There are a lot of Microchip Technology
2N5405 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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