2N5404
- Mfr.Part #
- 2N5404
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 48,022
- In Stock :
- 48,022
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package :
- Bulk
- Transistor Polarity :
- PNP
- Current - Collector (Ic) (Max) :
- 5 A
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- Manufacturer :
- Microchip
- Brand :
- Microchip Technology / Atmel
- Reach Compliance Code :
- Compliant
- VCEsat-Max :
- 0.6 V
- Series :
- -
- Frequency - Transition :
- -
- Package Shape :
- Round
- Collector Current-Max (IC) :
- 5 A
- Product Category :
- Bipolar Transistors - BJT
- Technology :
- Si
- Surface Mount :
- No
- Transistor Type :
- PNP
- Product Status :
- Active
- Subcategory :
- Transistors
- Number of Elements :
- 1
- Terminal Position :
- BOTTOM
- Terminal Form :
- Wire
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Supplier Device Package :
- TO-5AA
- Power - Max :
- 7 W
- JEDEC-95 Code :
- TO-5
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- -
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- DC Current Gain-Min (hFE) :
- 20
- Case Connection :
- COLLECTOR
- Mounting Type :
- Through Hole
- Number of Terminals :
- 3
- JESD-30 Code :
- O-MBCY-W3
- Collector-Emitter Voltage-Max :
- 80 V
- Configuration :
- Single
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- Power Dissipation-Max (Abs) :
- 1 W
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 200μA, 2mA
- Product Type :
- BJTs - Bipolar Transistors
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Datasheets
- 2N5404
PNP -65°C ~ 200°C (TJ) - 1 Elements SILICON PNP TO-205AA, TO-5-3 Metal Can Through Hole
2N5404 Overview
In this device, the DC current gain is -, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 200μA, 2mA.Supplier device package TO-5AA comes with the product.Voltage of maximal collector-emitter is set to 80 V.The device exhibits a collector-emitter breakdown at 80 V.
2N5404 Features
the DC current gain for this device is -
the vce saturation(Max) is 600mV @ 200μA, 2mA
the supplier device package of TO-5AA
2N5404 Applications
There are a lot of Microchip Technology
2N5404 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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