2N5401ZL1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Mount :

Through Hole

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA 5V

Collector Emitter Breakdown Voltage :

150V

Current - Collector (Ic) (Max) :

600mA

Current Rating :

-600mA

Peak Reflow Temperature (Cel) :

240

Lead Free :

Contains Lead

hFE Min :

50

Collector Base Voltage (VCBO) :

160V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Gain Bandwidth Product :

300MHz

Terminal Finish :

Tin/Lead (Sn/Pb)

Current - Collector Cutoff (Max) :

50nA ICBO

JESD-30 Code :

O-PBCY-T3

Packaging :

Tape and Box (TB)

HTS Code :

8541.21.00.95

Reach Compliance Code :

not_compliant

Transition Frequency :

100MHz

Published :

2005

Pin Count :

3

Voltage - Rated DC :

-150V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

500mV

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Base Part Number :

2N5401

JESD-609 Code :

e0

Number of Terminations :

3

Terminal Position :

BOTTOM

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Polarity/Channel Type :

PNP

Additional Feature :

EUROPEAN PART NUMBER

Max Collector Current :

600mA

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

Max Power Dissipation :

625mW

RoHS Status :

Non-RoHS Compliant

Transistor Type :

PNP

Collector Emitter Voltage (VCEO) :

500mV

Transistor Application :

AMPLIFIER

Emitter Base Voltage (VEBO) :

5V

ECCN Code :

EAR99