2N5401YTA
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- Mfr.Part #
- 2N5401YTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 150V 0.6A TO92-3
- Stock
- 131,259
- In Stock ：
- 131,259
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Base Part Number :
- 2N5401
- Gain Bandwidth Product :
- 400MHz
- Transition Frequency :
- 100MHz
- Terminal Finish :
- Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Element Configuration :
- Single
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 150V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Type :
- PNP
- Factory Lead Time :
- 7 Weeks
- Collector Base Voltage (VCBO) :
- 160V
- Frequency :
- 400MHz
- Packaging :
- Tape and Box (TB)
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Max Collector Current :
- 600mA
- Current Rating :
- -600mA
- Max Power Dissipation :
- 625mW
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Published :
- 2012
- Power Dissipation :
- 625mW
- Weight :
- 240mg
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 150V
- Voltage - Rated DC :
- -160V
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- BOTTOM
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Datasheets
- 2N5401YTA
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N5401YTA Overview
This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A maximum collector current of 600mA volts is possible.
2N5401YTA Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 100MHz
2N5401YTA Applications
There are a lot of ON Semiconductor
2N5401YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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