2N5401RLRM

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Position :

BOTTOM

Lead Free :

Contains Lead

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

50nA ICBO

Current Rating :

-600mA

Mounting Type :

Through Hole

Transistor Type :

PNP

Collector Emitter Voltage (VCEO) :

500mV

HTS Code :

8541.21.00.95

Base Part Number :

2N5401

Emitter Base Voltage (VEBO) :

5V

Element Configuration :

Single

Reach Compliance Code :

not_compliant

Published :

2005

Number of Elements :

1

Terminal Finish :

Tin/Lead (Sn/Pb)

Collector Emitter Breakdown Voltage :

150V

Qualification Status :

Not Qualified

Pin Count :

3

RoHS Status :

Non-RoHS Compliant

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Current - Collector (Ic) (Max) :

600mA

Transistor Element Material :

SILICON

Gain Bandwidth Product :

300MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Box (TB)

JESD-609 Code :

e0

Transition Frequency :

100MHz

Max Collector Current :

600mA

Mount :

Through Hole

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA 5V

Collector Emitter Saturation Voltage :

500mV

Voltage - Rated DC :

-150V

Number of Terminations :

3

Polarity/Channel Type :

PNP

hFE Min :

50

Collector Base Voltage (VCBO) :

160V

Transistor Application :

AMPLIFIER

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

625mW

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

240

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

JESD-30 Code :

O-PBCY-T3