2N5401RL1
- Mfr.Part #
- 2N5401RL1
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 150V 0.6A TO92
- Stock
- 1,128
- In Stock :
- 1,128
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- HTS Code :
- 8541.21.00.95
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Transistor Application :
- AMPLIFIER
- Additional Feature :
- EUROPEAN PART NUMBER
- Reach Compliance Code :
- Unknown
- Transition Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- RoHS Compliant
- Max Collector Current :
- 600mA
- Collector Emitter Breakdown Voltage :
- 150V
- Base Part Number :
- 2N5401
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Mounting Type :
- Through Hole
- Current - Collector (Ic) (Max) :
- 600mA
- Transistor Type :
- PNP
- Number of Elements :
- 1
- hFE Min :
- 50
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Gain Bandwidth Product :
- 300MHz
- JESD-609 Code :
- e1
- Terminal Position :
- BOTTOM
- Emitter Base Voltage (VEBO) :
- 5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 625mW
- Number of Terminations :
- 3
- Current Rating :
- -600mA
- Surface Mount :
- No
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- Published :
- 2005
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Collector Emitter Voltage (VCEO) :
- 500mV
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 500mV
- Collector Base Voltage (VCBO) :
- 160V
- Voltage - Rated DC :
- -150V
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Datasheets
- 2N5401RL1

PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N5401RL1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 60 @ 10mA 5V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -600mA.In the part, the transition frequency is 100MHz.A maximum collector current of 600mA volts can be achieved.
2N5401RL1G Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 100MHz
2N5401RL1G Applications
There are a lot of ON Semiconductor
2N5401RL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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