2N5401G
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- Mfr.Part #
- 2N5401G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 150V 0.6A TO92
- Stock
- 4,255
- In Stock ：
- 4,255
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 625mW
- Lead Free :
- Lead Free
- Surface Mount :
- No
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- RoHS Status :
- RoHS Compliant
- Pin Count :
- 3
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Collector Emitter Saturation Voltage :
- 500mV
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 300MHz
- Transition Frequency :
- 100MHz
- Published :
- 2005
- Contact Plating :
- Copper, Silver, Tin
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Transistor Application :
- AMPLIFIER
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 150V
- Packaging :
- Bulk
- Emitter Base Voltage (VEBO) :
- 5V
- Current Rating :
- -600mA
- Max Collector Current :
- 600mA
- hFE Min :
- 50
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Length :
- 5.1816mm
- Collector Emitter Voltage (VCEO) :
- 150V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Frequency :
- 300MHz
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 160V
- Weight :
- 4.535924g
- Width :
- 4.191mm
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 625mW
- Voltage - Rated DC :
- -150V
- Base Part Number :
- 2N5401
- Height :
- 5.334mm
- Terminal Position :
- BOTTOM
- Number of Pins :
- 3
- JESD-609 Code :
- e1
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- PNP
- Pbfree Code :
- yes
- Datasheets
- 2N5401G
,TO-226_straightlead.jpg)
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
2N5401G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 60 @ 10mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 5mA, 50mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -600mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
2N5401G Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 100MHz
2N5401G Applications
There are a lot of ON Semiconductor
2N5401G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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