2N5401BU

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Mfr.Part #
2N5401BU
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS PNP 150V 0.6A TO-92
Stock
6,600
In Stock :
6,600

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Element Configuration :
Single
Max Frequency :
400MHz
Number of Pins :
3
Power - Max :
625mW
Max Power Dissipation :
625mW
Max Operating Temperature :
150°C
Collector Base Voltage (VCBO) :
160V
Current Rating :
-600mA
Mounting Type :
Through Hole
Emitter Base Voltage (VEBO) :
5V
Supplier Device Package :
TO-92-3
Power Dissipation :
625mW
Current - Collector (Ic) (Max) :
600mA
hFE Min :
60
Lead Free :
Lead Free
Mount :
Through Hole
Collector Emitter Voltage (VCEO) :
150V
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 10mA 5V
Collector Emitter Breakdown Voltage :
150V
Polarity :
PNP
Vce Saturation (Max) @ Ib, Ic :
500mV @ 5mA, 50mA
Min Operating Temperature :
-55°C
Gain Bandwidth Product :
300MHz
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
REACH SVHC :
No SVHC
Operating Temperature :
-55°C~150°C TJ
Published :
2004
Max Collector Current :
600mA
Current - Collector Cutoff (Max) :
50nA ICBO
Base Part Number :
2N5401
RoHS Status :
RoHS Compliant
Frequency :
400MHz
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Voltage - Collector Emitter Breakdown (Max) :
150V
Transistor Type :
PNP
Packaging :
Bulk
Weight :
178.2mg
Voltage - Rated DC :
-150V
Frequency - Transition :
400MHz
Number of Elements :
1
Datasheets
2N5401BU
Introducing Transistors - Bipolar (BJT) - Single onsemi 2N5401BU from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Base Part Number:2N5401, Package / Case:TO-226-3, TO-92-3 (TO-226AA), 2N5401BU pinout, 2N5401BU datasheet PDF, 2N5401BU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N5401BU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2N5401BU


PNP -55°C~150°C TJ 50nA ICBO 1 Elements TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

2N5401BU Overview


DC current gain in this device equals 60 @ 10mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 5mA, 50mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -600mA current rating.Product comes in TO-92-3 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 600mA volts.

2N5401BU Features


the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
the supplier device package of TO-92-3


2N5401BU Applications


There are a lot of ON Semiconductor
2N5401BU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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