2N5401,412
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- Mfr.Part #
- 2N5401,412
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 150V 0.3A TO92-3
- Stock
- 24,426
- In Stock ：
- 24,426
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- HTS Code :
- 8541.21.00.95
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Frequency - Transition :
- 300MHz
- JESD-30 Code :
- O-PBCY-T3
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Collector-Base Capacitance-Max :
- 6pF
- Terminal Finish :
- Matte Tin (Sn)
- Base Part Number :
- 2N5401
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Transistor Type :
- PNP
- Qualification Status :
- Not Qualified
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Power Dissipation-Max (Abs) :
- 0.63W
- Mounting Type :
- Through Hole
- Surface Mount :
- No
- Polarity/Channel Type :
- PNP
- Voltage - Collector Emitter Breakdown (Max) :
- 150V
- Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Power - Max :
- 630mW
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Pin Count :
- 3
- Number of Elements :
- 1
- Current - Collector (Ic) (Max) :
- 300mA
- Transition Frequency :
- 100MHz
- VCEsat-Max :
- 0.5 V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Transistor Application :
- SWITCHING
- Datasheets
- 2N5401,412
PNP 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Tube Through Hole
2N5401,412 Overview
In this device, the DC current gain is 60 @ 10mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 5mA, 50mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.There is a 150V maximal voltage in the device due to collector-emitter breakdown.
2N5401,412 Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
a transition frequency of 100MHz
2N5401,412 Applications
There are a lot of NXP USA Inc.
2N5401,412 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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