2N5401,116

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Finish :

Matte Tin (Sn)

Power Dissipation-Max (Abs) :

0.63W

Reach Compliance Code :

Unknown

Configuration :

Single

Terminal Position :

BOTTOM

Number of Terminations :

3

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Base Part Number :

2N5401

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA 5V

VCEsat-Max :

0.5 V

JESD-30 Code :

O-PBCY-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Current - Collector (Ic) (Max) :

300mA

Transistor Element Material :

SILICON

Voltage - Collector Emitter Breakdown (Max) :

150V

Current - Collector Cutoff (Max) :

50nA ICBO

Operating Temperature :

150°C TJ

JESD-609 Code :

e3

Mounting Type :

Through Hole

Power - Max :

630mW

Polarity/Channel Type :

PNP

Number of Elements :

1

Transition Frequency :

100MHz

Transistor Application :

SWITCHING

Transistor Type :

PNP

RoHS Status :

ROHS3 Compliant

Collector-Base Capacitance-Max :

6pF

Surface Mount :

No

Published :

1999

HTS Code :

8541.21.00.95

Frequency - Transition :

300MHz

Pin Count :

3

Qualification Status :

Not Qualified