2N5339QFN/TR
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- Mfr.Part #
- 2N5339QFN/TR
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 17,349
- In Stock ：
- 17,349
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Manufacturer :
- Microchip
- Frequency - Transition :
- -
- Voltage - Collector Emitter Breakdown (Max) :
- 100 V
- Package :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 2A, 2V
- Product Type :
- BJTs - Bipolar Transistors
- Operating Temperature :
- -55°C ~ 200°C
- Product Category :
- Bipolar Transistors - BJT
- Series :
- -
- Supplier Device Package :
- TO-39 (TO-205AD)
- Product Status :
- Active
- Subcategory :
- Transistors
- Brand :
- Microchip Technology
- Current - Collector Cutoff (Max) :
- 100μA
- Current - Collector (Ic) (Max) :
- 5 A
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 500mA, 5A
- Power - Max :
- 1 W
- Transistor Type :
- NPN
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Datasheets
- 2N5339QFN/TR
NPN -55°C ~ 200°C 100μA TO-205AD, TO-39-3 Metal Can Through Hole
2N5339QFN/TR Overview
In this device, the DC current gain is 60 @ 2A, 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 500mA, 5A.Product comes in the supplier's device package TO-39 (TO-205AD).There is a 100 V maximal voltage in the device due to collector-emitter breakdown.
2N5339QFN/TR Features
the DC current gain for this device is 60 @ 2A, 2V
the vce saturation(Max) is 1.2V @ 500mA, 5A
the supplier device package of TO-39 (TO-205AD)
2N5339QFN/TR Applications
There are a lot of Microchip Technology
2N5339QFN/TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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