2N5318

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation-Max (Abs) :

50 W

Voltage - Collector Emitter Breakdown (Max) :

100 V

Series :

-

Supplier Device Package :

TO-61

Transistor Polarity :

PNP

Collector-Emitter Voltage-Max :

100 V

Configuration :

Single

Number of Elements :

1

Polarity/Channel Type :

PNP

Current - Collector Cutoff (Max) :

-

Product Status :

Active

VCEsat-Max :

1 V

Manufacturer :

Microchip

Frequency - Transition :

-

Qualification Status :

Not Qualified

Terminal Form :

Solder Lug

Brand :

Microchip Technology

Terminal Position :

UPPER

JESD-30 Code :

O-MUPM-D3

ECCN Code :

EAR99

Power - Max :

87 W

Subcategory :

Transistors

DC Current Gain (hFE) (Min) @ Ic, Vce :

-

Surface Mount :

No

Package Shape :

Round

Operating Temperature :

-65°C ~ 200°C (TJ)

Package :

Bulk

Case Connection :

Isolated

Product Type :

BJTs - Bipolar Transistors

Transistor Type :

PNP

Collector Current-Max (IC) :

10 A

Product Category :

Bipolar Transistors - BJT

Mounting Type :

Stud Mount

Package / Case :

TO-211MA, TO-210AC, TO-61-4, Stud

Vce Saturation (Max) @ Ib, Ic :

-

Reach Compliance Code :

Compliant

JEDEC-95 Code :

TO-61

Transistor Element Material :

SILICON

Current - Collector (Ic) (Max) :

10 A

Number of Terminals :

3

Technology :

Si

DC Current Gain-Min (hFE) :

30