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  5. 2N5308_D75Z
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    2N5308_D75Z

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    Mfr.Part #
    2N5308_D75Z
    Manufacturer
    onsemi
    Package / Case
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    Datasheet
    Download
    Description
    TRANS NPN DARL 40V 1.2A TO92-3
    Stock
    7,013
    In Stock ：
    7,013

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    Manufacturer :
    onsemi
    Product Category :
    Transistors - Bipolar (BJT) - Single
    Package / Case :
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    Voltage - Collector Emitter Breakdown (Max) :
    40V
    Current - Collector Cutoff (Max) :
    100nA ICBO
    Transistor Type :
    NPN - Darlington
    Base Part Number :
    2N5308
    Packaging :
    Tape and Box (TB)
    Power - Max :
    625mW
    Current - Collector (Ic) (Max) :
    1.2A
    Operating Temperature :
    -55°C~150°C TJ
    Mounting Type :
    Through Hole
    DC Current Gain (hFE) (Min) @ Ic, Vce :
    7000 @ 2mA 5V
    Moisture Sensitivity Level (MSL) :
    1 (Unlimited)
    Vce Saturation (Max) @ Ib, Ic :
    1.4V @ 200μA, 200mA
    Datasheets
    2N5308_D75Z
    Introducing Transistors - Bipolar (BJT) - Single onsemi 2N5308_D75Z from Chip IC,where excellence meets affordability. This product stands out with its Package / Case：TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Base Part Number：2N5308, Operating Temperature：-55°C~150°C TJ, Mounting Type：Through Hole, 2N5308_D75Z pinout, 2N5308_D75Z datasheet PDF, 2N5308_D75Z amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N5308_D75Z ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

    onsemi 2N5308_D75Z


    NPN - Darlington -55°C~150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

    2N5308_D75Z Overview


    In this device, the DC current gain is 7000 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.4V @ 200μA, 200mA.The device exhibits a collector-emitter breakdown at 40V.

    2N5308_D75Z Features


    the DC current gain for this device is 7000 @ 2mA 5V
    the vce saturation(Max) is 1.4V @ 200μA, 200mA


    2N5308_D75Z Applications


    There are a lot of ON Semiconductor
    2N5308_D75Z applications of single BJT transistors.


    • Inverter
    • Interface
    • Driver
    • Muting
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