2N4921G
- Mfr.Part #
- 2N4921G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 1A TO126
- Stock
- 257
- In Stock :
- 257
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 500mA 1V
- Current - Collector Cutoff (Max) :
- 500μA
- Frequency :
- 3MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 600mV
- Collector Emitter Voltage (VCEO) :
- 40V
- Number of Terminations :
- 3
- Packaging :
- Bulk
- Base Part Number :
- 2N4921
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- hFE Min :
- 40
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-225AA, TO-126-3
- Number of Pins :
- 3
- Max Collector Current :
- 1A
- Halogen Free :
- Halogen Free
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 40V
- Element Configuration :
- Single
- Published :
- 2000
- Radiation Hardening :
- No
- Factory Lead Time :
- 2 Weeks
- Max Power Dissipation :
- 30W
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 3MHz
- Weight :
- 4.535924g
- Current Rating :
- 1A
- Transition Frequency :
- 3MHz
- Width :
- 2.66mm
- Height :
- 11.04mm
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Pin Count :
- 3
- Surface Mount :
- No
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Length :
- 7.74mm
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Voltage - Rated DC :
- 40V
- Emitter Base Voltage (VEBO) :
- 5V
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 40V
- Power Dissipation :
- 30W
- Datasheets
- 2N4921G
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NPN -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
2N4921G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 500mA 1V DC current gain.As it features a collector emitter saturation voltage of 600mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 1A volts.
2N4921G Features
the DC current gain for this device is 30 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 3MHz
2N4921G Applications
There are a lot of ON Semiconductor
2N4921G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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