2N4918
- Mfr.Part #
- 2N4918
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 1A TO126
- Stock
- 40,408
- In Stock :
- 40,408
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 40V
- Frequency :
- 3MHz
- Max Power Dissipation :
- 30W
- Package / Case :
- TO-225AA, TO-126-3
- Current Rating :
- 1A
- Gain Bandwidth Product :
- 3MHz
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Terminal Finish :
- Tin (Sn)
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 40V
- Polarity/Channel Type :
- PNP
- Max Collector Current :
- 3A
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 500μA
- Operating Temperature :
- -65°C~150°C TJ
- Element Configuration :
- Single
- Factory Lead Time :
- 2 Weeks
- Packaging :
- Bulk
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- -40V
- Power Dissipation :
- 30W
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 40V
- Transition Frequency :
- 3MHz
- Height :
- 11.049mm
- Base Part Number :
- 2N4918
- Mounting Type :
- Through Hole
- Width :
- 2.667mm
- Published :
- 2004
- Length :
- 7.7216mm
- Weight :
- 4.535924g
- Number of Elements :
- 1
- Number of Pins :
- 3
- hFE Min :
- 40
- Surface Mount :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- PNP
- Collector Emitter Saturation Voltage :
- 600mV
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 500mA 1V
- Halogen Free :
- Halogen Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Datasheets
- 2N4918
2N4918 Documents
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PNP -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
2N4918G Overview
In this device, the DC current gain is 30 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).3MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.
2N4918G Features
the DC current gain for this device is 30 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 3MHz
2N4918G Applications
There are a lot of ON Semiconductor
2N4918G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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