2N4918
- Mfr.Part #
- 2N4918
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 1A TO126
- Stock
- 40,408
- In Stock :
- 40,408
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 7.7216mm
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 3MHz
- Height :
- 11.049mm
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 500μA
- Halogen Free :
- Halogen Free
- Collector Emitter Saturation Voltage :
- 600mV
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 30W
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Collector Emitter Voltage (VCEO) :
- 40V
- JESD-609 Code :
- e3
- Weight :
- 4.535924g
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 40V
- Packaging :
- Bulk
- Base Part Number :
- 2N4918
- Number of Elements :
- 1
- Transistor Type :
- PNP
- Package / Case :
- TO-225AA, TO-126-3
- Transition Frequency :
- 3MHz
- Lead Free :
- Lead Free
- Factory Lead Time :
- 2 Weeks
- Frequency :
- 3MHz
- Operating Temperature :
- -65°C~150°C TJ
- Published :
- 2004
- Current Rating :
- 1A
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Voltage - Rated DC :
- -40V
- REACH SVHC :
- No SVHC
- Surface Mount :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 500mA 1V
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- hFE Min :
- 40
- Max Power Dissipation :
- 30W
- Element Configuration :
- Single
- Max Collector Current :
- 3A
- Width :
- 2.667mm
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 40V
- Terminal Finish :
- Tin (Sn)
- Datasheets
- 2N4918
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PNP -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
2N4918G Overview
In this device, the DC current gain is 30 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).3MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.
2N4918G Features
the DC current gain for this device is 30 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 3MHz
2N4918G Applications
There are a lot of ON Semiconductor
2N4918G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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