2N4123TAR
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- Mfr.Part #
- 2N4123TAR
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.2A TO92-3
- Stock
- 17,157
- In Stock ：
- 17,157
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 625mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 2mA 1V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Packaging :
- Tape and Box (TB)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 1997
- Current - Collector (Ic) (Max) :
- 200mA
- Supplier Device Package :
- TO-92-3
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Transistor Type :
- NPN
- Frequency - Transition :
- 250MHz
- Operating Temperature :
- -55°C~150°C TJ
- Base Part Number :
- 2N4123
- Datasheets
- 2N4123TAR
NPN -55°C~150°C TJ 50nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N4123TAR Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 2mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 5mA, 50mA.TO-92-3 is the supplier device package for this product.This device displays a 30V maximum voltage - Collector Emitter Breakdown.
2N4123TAR Features
the DC current gain for this device is 50 @ 2mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA
the supplier device package of TO-92-3
2N4123TAR Applications
There are a lot of ON Semiconductor
2N4123TAR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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