2N3906,116
- Mfr.Part #
- 2N3906,116
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A TO92-3
- Stock
- 22,923
- In Stock :
- 22,923
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector-Base Capacitance-Max :
- 4.5pF
- Power - Max :
- 500mW
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Transistor Type :
- PNP
- Turn Off Time-Max (toff) :
- 300ns
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 5mA, 50mA
- Pin Count :
- 3
- Frequency - Transition :
- 250MHz
- Configuration :
- Single
- Turn On Time-Max (ton) :
- 65ns
- Transistor Application :
- SWITCHING
- Current - Collector (Ic) (Max) :
- 200mA
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- Surface Mount :
- No
- Polarity/Channel Type :
- PNP
- Transition Frequency :
- 250MHz
- Transistor Element Material :
- SILICON
- Power Dissipation-Max (Abs) :
- 0.5W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- VCEsat-Max :
- 0.4 V
- Base Part Number :
- 2N3906
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Qualification Status :
- Not Qualified
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- BOTTOM
- Packaging :
- Tape and Reel (TR)
- HTS Code :
- 8541.21.00.75
- JESD-30 Code :
- O-PBCY-T3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- 2N3906,116
,TO-226_straightlead.jpg)
PNP 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N3906,116 Overview
DC current gain in this device equals 100 @ 10mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 200mV @ 5mA, 50mA.As a result, the part has a transition frequency of 250MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
2N3906,116 Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 200mV @ 5mA, 50mA
a transition frequency of 250MHz
2N3906,116 Applications
There are a lot of NXP USA Inc.
2N3906,116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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