2N3904,412
- Mfr.Part #
- 2N3904,412
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.2A TO92-3
- Stock
- 38,714
- In Stock :
- 38,714
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Current - Collector (Ic) (Max) :
- 200mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Terminal Position :
- BOTTOM
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- NPN
- Collector-Base Capacitance-Max :
- 4pF
- Number of Elements :
- 1
- JESD-30 Code :
- O-PBCY-T3
- Qualification Status :
- Not Qualified
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- ECCN Code :
- EAR99
- Transition Frequency :
- 300MHz
- Base Part Number :
- 2N3904
- Turn On Time-Max (ton) :
- 65ns
- VCEsat-Max :
- 0.3 V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Power Dissipation-Max (Abs) :
- 0.5W
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- HTS Code :
- 8541.21.00.75
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 5mA, 50mA
- Packaging :
- Tube
- Power - Max :
- 500mW
- Configuration :
- Single
- Turn Off Time-Max (toff) :
- 240ns
- Surface Mount :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Published :
- 1996
- Mounting Type :
- Through Hole
- Frequency - Transition :
- 300MHz
- Datasheets
- 2N3904,412

NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Tube Through Hole
2N3904,412 Overview
This device has a DC current gain of 100 @ 10mA 1V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 300MHz.Detection of Collector Emitter Breakdown at 40V maximal voltage is present.
2N3904,412 Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 200mV @ 5mA, 50mA
a transition frequency of 300MHz
2N3904,412 Applications
There are a lot of NXP USA Inc.
2N3904,412 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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