2N3055HG
- Mfr.Part #
- 2N3055HG
- Manufacturer
- onsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 15A TO204
- Stock
- 23,377
- In Stock :
- 23,377
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 100V
- Transistor Type :
- NPN
- Terminal Finish :
- Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4A 4V
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 2
- Element Configuration :
- Single
- Package / Case :
- TO-204AA, TO-3
- Pin Count :
- 2
- Current Rating :
- 15A
- Collector Emitter Voltage (VCEO) :
- 3V
- Current - Collector Cutoff (Max) :
- 700µA
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transition Frequency :
- 2.5MHz
- Mounting Type :
- Through Hole
- Packaging :
- Tray
- Terminal Form :
- PIN/PEG
- Collector Emitter Saturation Voltage :
- 1.1V
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 3.3A, 10A
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 115W
- Base Part Number :
- 2N3055
- Gain Bandwidth Product :
- 2.5MHz
- JESD-609 Code :
- e3
- Max Collector Current :
- 15A
- Transistor Application :
- SWITCHING
- hFE Min :
- 20
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Published :
- 2004
- Emitter Base Voltage (VEBO) :
- 7V
- Number of Pins :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- RoHS Compliant
- Terminal Position :
- BOTTOM
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 60V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 60V
- Operating Temperature :
- -65°C~200°C TJ
- Datasheets
- 2N3055HG

NPN -65°C~200°C TJ 700μA 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole
2N3055HG Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 4A 4V.The collector emitter saturation voltage is 1.1V, which allows for maximum design flexibility.When VCE saturation is 3V @ 3.3A, 10A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 15A.In the part, the transition frequency is 2.5MHz.A maximum collector current of 15A volts can be achieved.
2N3055HG Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 3V @ 3.3A, 10A
the emitter base voltage is kept at 7V
the current rating of this device is 15A
a transition frequency of 2.5MHz
2N3055HG Applications
There are a lot of ON Semiconductor
2N3055HG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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