2N3055HG
- Mfr.Part #
- 2N3055HG
- Manufacturer
- onsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 15A TO204
- Stock
- 23,377
- In Stock :
- 23,377
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 15A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4A 4V
- Collector Emitter Breakdown Voltage :
- 60V
- Emitter Base Voltage (VEBO) :
- 7V
- Number of Pins :
- 2
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 3.3A, 10A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Operating Temperature :
- -65°C~200°C TJ
- Voltage - Rated DC :
- 60V
- Transistor Application :
- SWITCHING
- Packaging :
- Tray
- Case Connection :
- COLLECTOR
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 2.5MHz
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 100V
- Published :
- 2004
- RoHS Status :
- RoHS Compliant
- Collector Emitter Voltage (VCEO) :
- 3V
- Number of Terminations :
- 2
- Current - Collector Cutoff (Max) :
- 700µA
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Current Rating :
- 15A
- Base Part Number :
- 2N3055
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 115W
- Pin Count :
- 2
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Saturation Voltage :
- 1.1V
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-204AA, TO-3
- Mount :
- Through Hole
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 2.5MHz
- Mounting Type :
- Through Hole
- Terminal Form :
- PIN/PEG
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- hFE Min :
- 20
- Number of Elements :
- 1
- Terminal Position :
- BOTTOM
- Datasheets
- 2N3055HG
2N3055HG Documents

NPN -65°C~200°C TJ 700μA 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole
2N3055HG Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 4A 4V.The collector emitter saturation voltage is 1.1V, which allows for maximum design flexibility.When VCE saturation is 3V @ 3.3A, 10A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 15A.In the part, the transition frequency is 2.5MHz.A maximum collector current of 15A volts can be achieved.
2N3055HG Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 3V @ 3.3A, 10A
the emitter base voltage is kept at 7V
the current rating of this device is 15A
a transition frequency of 2.5MHz
2N3055HG Applications
There are a lot of ON Semiconductor
2N3055HG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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