2N3055HG

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Mfr.Part #
2N3055HG
Manufacturer
onsemi
Package / Case
TO-204AA, TO-3
Datasheet
Download
Description
TRANS NPN 60V 15A TO204
Stock
23,377
In Stock :
23,377

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Base Voltage (VCBO) :
100V
Transistor Type :
NPN
Terminal Finish :
Tin (Sn)
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 4A 4V
Qualification Status :
Not Qualified
Number of Terminations :
2
Element Configuration :
Single
Package / Case :
TO-204AA, TO-3
Pin Count :
2
Current Rating :
15A
Collector Emitter Voltage (VCEO) :
3V
Current - Collector Cutoff (Max) :
700µA
Peak Reflow Temperature (Cel) :
260
Number of Elements :
1
Polarity/Channel Type :
NPN
Time@Peak Reflow Temperature-Max (s) :
40
Transition Frequency :
2.5MHz
Mounting Type :
Through Hole
Packaging :
Tray
Terminal Form :
PIN/PEG
Collector Emitter Saturation Voltage :
1.1V
Vce Saturation (Max) @ Ib, Ic :
3V @ 3.3A, 10A
Lead Free :
Lead Free
Max Power Dissipation :
115W
Base Part Number :
2N3055
Gain Bandwidth Product :
2.5MHz
JESD-609 Code :
e3
Max Collector Current :
15A
Transistor Application :
SWITCHING
hFE Min :
20
Pbfree Code :
yes
Mount :
Through Hole
Published :
2004
Emitter Base Voltage (VEBO) :
7V
Number of Pins :
2
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
RoHS Compliant
Terminal Position :
BOTTOM
Case Connection :
COLLECTOR
Transistor Element Material :
SILICON
Voltage - Rated DC :
60V
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 week ago)
ECCN Code :
EAR99
Collector Emitter Breakdown Voltage :
60V
Operating Temperature :
-65°C~200°C TJ
Datasheets
2N3055HG
Introducing Transistors - Bipolar (BJT) - Single onsemi 2N3055HG from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Package / Case:TO-204AA, TO-3, Mounting Type:Through Hole, Base Part Number:2N3055, Number of Pins:2, Operating Temperature:-65°C~200°C TJ, 2N3055HG pinout, 2N3055HG datasheet PDF, 2N3055HG amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N3055HG ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2N3055HG


NPN -65°C~200°C TJ 700μA 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole

2N3055HG Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 4A 4V.The collector emitter saturation voltage is 1.1V, which allows for maximum design flexibility.When VCE saturation is 3V @ 3.3A, 10A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 15A.In the part, the transition frequency is 2.5MHz.A maximum collector current of 15A volts can be achieved.

2N3055HG Features


the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 3V @ 3.3A, 10A
the emitter base voltage is kept at 7V
the current rating of this device is 15A
a transition frequency of 2.5MHz


2N3055HG Applications


There are a lot of ON Semiconductor
2N3055HG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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