2N2907AUB

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Mfr.Part #
2N2907AUB
Manufacturer
TT Electronics
Package / Case
3-SMD, No Lead
Datasheet
Download
Description
TRANS PNP 60V 0.6A SMD
Stock
410
In Stock :
410

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Manufacturer :
TT Electronics
Product Category :
Transistors - Bipolar (BJT) - Single
Min Operating Temperature :
-65°C
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Collector Current :
600mA
Current - Collector (Ic) (Max) :
600mA
Collector Base Voltage (VCBO) :
60V
Collector Emitter Voltage (VCEO) :
60V
Mounting Type :
Surface Mount
Voltage - Collector Emitter Breakdown (Max) :
60V
Max Operating Temperature :
200°C
Collector Emitter Breakdown Voltage :
60V
Packaging :
Bulk
Package / Case :
3-SMD, No Lead
Operating Temperature :
-65°C~200°C TJ
Collector Emitter Saturation Voltage :
1.6V
Lead Free :
Contains Lead
Height :
1.42mm
Emitter Base Voltage (VEBO) :
5V
hFE Min :
100
Power Dissipation :
500mW
Polarity :
PNP
Power - Max :
500mW
Radiation Hardening :
No
RoHS Status :
Non-RoHS Compliant
Published :
2005
Transistor Type :
PNP
Supplier Device Package :
UB
Factory Lead Time :
8 Weeks
Max Power Dissipation :
500mW
Vce Saturation (Max) @ Ib, Ic :
1.6V @ 50mA, 500mA
Max Junction Temperature (Tj) :
200°C
Mount :
Surface Mount
Current - Collector Cutoff (Max) :
50nA
Number of Elements :
1
Number of Pins :
3
Datasheets
2N2907AUB
Introducing Transistors - Bipolar (BJT) - Single TT Electronics 2N2907AUB from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:3-SMD, No Lead, Operating Temperature:-65°C~200°C TJ, Number of Pins:3, 2N2907AUB pinout, 2N2907AUB datasheet PDF, 2N2907AUB amp .Beyond Transistors - Bipolar (BJT) - Single TT Electronics 2N2907AUB ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

TT Electronics 2N2907AUB


PNP -65°C~200°C TJ 50nA 1 Elements 3-SMD, No Lead Bulk Surface Mount

2N2907AUB Overview


This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.6V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Single BJT transistor comes in a supplier device package of UB.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.The maximum collector current is 600mA volts.

2N2907AUB Features


the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of UB


2N2907AUB Applications


There are a lot of Microsemi Corporation
2N2907AUB applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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