2N2369A

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Base Voltage (VCBO) :

40V

Power Dissipation :

360mW

Collector Emitter Voltage (VCEO) :

15V

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Transistor Type :

NPN

Pbfree Code :

No

Number of Terminations :

3

ECCN Code :

EAR99

Terminal Position :

BOTTOM

Transistor Application :

SWITCHING

JESD-609 Code :

e0

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 100mA 1V

Published :

2002

Terminal Finish :

TIN LEAD

Mounting Type :

Through Hole

Number of Elements :

1

Lead Free :

Contains Lead

Contact Plating :

Lead, Tin

Mount :

Through Hole

Vce Saturation (Max) @ Ib, Ic :

450mV @ 10mA, 100mA

Collector Emitter Breakdown Voltage :

15V

Radiation Hardening :

No

Case Connection :

COLLECTOR

Terminal Form :

Wire

Polarity/Channel Type :

NPN

Transition Frequency :

500MHz

Operating Temperature :

-65°C~200°C TJ

Number of Pins :

3

RoHS Status :

Non-RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

360mW

Factory Lead Time :

12 Weeks

Pin Count :

3

Transistor Element Material :

SILICON

Max Collector Current :

400nA

Package / Case :

TO-206AA, TO-18-3 Metal Can

Emitter Base Voltage (VEBO) :

4.5V

Packaging :

Bulk

Configuration :

Single

Collector-Base Capacitance-Max :

4pF

VCEsat-Max :

0.45 V