2N1890S

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Power - Max :

800 mW

Collector Emitter Voltage (VCEO) :

60 V

Vce Saturation (Max) @ Ib, Ic :

5V @ 15mA, 150mA

Package :

Bulk

Max Collector Current :

500 mA

RoHS :

Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA, 10V

Number of Pins :

3

Package / Case :

TO-205AD, TO-39-3 Metal Can

Current - Collector (Ic) (Max) :

500 mA

Series :

-

Voltage - Collector Emitter Breakdown (Max) :

80 V

Packaging :

Bulk

Min Operating Temperature :

-65 °C

Radiation Hardening :

No

Product Status :

Active

Collector Base Voltage (VCBO) :

100 V

Lifecycle Status :

Production (Last Updated: 2 months ago)

Max Power Dissipation :

800 mW

Frequency - Transition :

-

Max Operating Temperature :

200 °C

Transistor Type :

NPN

Supplier Device Package :

TO-39 (TO-205AD)

Mounting Type :

Through Hole

Operating Temperature :

-65°C ~ 200°C (TJ)

Technology :

Si

Current - Collector Cutoff (Max) :

10nA (ICBO)

Mount :

Through Hole