2N1613 PBFREE
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- Mfr.Part #
- 2N1613 PBFREE
- Manufacturer
- Central Semiconductor
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.5A TO39
- Stock
- 776
- In Stock ：
- 776
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Operating Temperature :
- -65°C~200°C TJ
- Packaging :
- Bulk
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 500mA
- Factory Lead Time :
- 20 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- RoHS Status :
- ROHS3 Compliant
- Frequency - Transition :
- 60MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 15mA, 150mA
- Power - Max :
- 3W
- Datasheets
- 2N1613 PBFREE
NPN -65°C~200°C TJ 10nA ICBO TO-205AD, TO-39-3 Metal Can Bulk Through Hole
2N1613 PBFREE Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 15mA, 150mA.A 50V maximal voltage - Collector Emitter Breakdown is present in the device.
2N1613 PBFREE Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.5V @ 15mA, 150mA
2N1613 PBFREE Applications
There are a lot of Central Semiconductor Corp
2N1613 PBFREE applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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