2N1488
- Mfr.Part #
- 2N1488
- Manufacturer
- Microchip Technology
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 40,118
- In Stock :
- 40,118
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JEDEC-95 Code :
- TO-3
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Package :
- Bulk
- Series :
- -
- Power Dissipation-Max (Abs) :
- 75 W
- Package Shape :
- Round
- Terminal Position :
- BOTTOM
- Transistor Type :
- NPN
- Min Operating Temperature :
- -65 °C
- Frequency - Transition :
- -
- Surface Mount :
- No
- Qualification Status :
- Not Qualified
- Voltage - Collector Emitter Breakdown (Max) :
- 55 V
- Max Power Dissipation :
- 75 W
- Supplier Device Package :
- TO-204AD (TO-3)
- Number of Elements :
- 1
- Number of Terminals :
- 2
- Current - Collector Cutoff (Max) :
- 25μA (ICBO)
- VCEsat-Max :
- 3 V
- Collector Current-Max (IC) :
- 6 A
- Product Status :
- Active
- Collector Emitter Voltage (VCEO) :
- 55 V
- Packaging :
- Bulk
- Product Type :
- BJTs - Bipolar Transistors
- Terminal Form :
- PIN/PEG
- Configuration :
- Single
- Power - Max :
- 75 W
- Reach Compliance Code :
- Compliant
- Power Dissipation Ambient-Max :
- 75 W
- Max Operating Temperature :
- 200 °C
- DC Current Gain-Min (hFE) :
- 15
- Subcategory :
- Transistors
- Manufacturer :
- Microchip
- JESD-30 Code :
- O-MBFM-P2
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 1.5A, 4V
- Number of Pins :
- 3
- Product Category :
- Bipolar Transistors - BJT
- Max Collector Current :
- 6 A
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 100 V
- Polarity/Channel Type :
- NPN
- Current - Collector (Ic) (Max) :
- 6 A
- Mount :
- Through Hole
- Package / Case :
- TO-204AA, TO-3
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 300mA, 1.5A
- RoHS :
- Compliant
- Brand :
- Microchip Technology
- Collector-Emitter Voltage-Max :
- 55 V
- Mounting Type :
- Through Hole
- Datasheets
- 2N1488
NPN -65°C ~ 200°C (TJ) 25μA (ICBO) 1 Elements SILICON NPN TO-204AA, TO-3 Bulk Through Hole
2N1488 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 1.5A, 4V.When VCE saturation is 3V @ 300mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-204AD (TO-3) contains the product.Voltage maximal between collector and emitter is set to 55 V.The device has a 55 V maximal voltage - Collector Emitter Breakdown.A maximum collector current of 6 A volts can be achieved.
2N1488 Features
the DC current gain for this device is 15 @ 1.5A, 4V
the vce saturation(Max) is 3V @ 300mA, 1.5A
the supplier device package of TO-204AD (TO-3)
2N1488 Applications
There are a lot of Microchip Technology
2N1488 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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