2ED2101S06FXUMA1
- Mfr.Part #
- 2ED2101S06FXUMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- LEVEL SHIFT SOI
- Stock
- 18,772
- In Stock :
- 18,772
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Gate Drivers
- Maximum Operating Supply Voltage :
- 20 V
- Product :
- IGBT, MOSFET Gate Drivers
- Input Logic Compatibility :
- 3.3V/5V/15V/CMOS/LSTTL
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Rise / Fall Time (Typ) :
- 70ns, 35ns
- Operating Temperature :
- -40°C ~ 125°C (TA)
- Channel Type :
- Independent
- Voltage - Supply :
- 10V ~ 20V
- High Side Voltage - Max (Bootstrap) :
- 650 V
- Product Status :
- Active
- Supplier Device Package :
- PG-DSO-8-69
- Gate Type :
- IGBT, N-Channel MOSFET
- Minimum Operating Supply Voltage :
- 10 V
- Type :
- High-Side, Low-Side
- Series :
- -
- Pin Count :
- 8
- Peak Output Current :
- 700 mA
- Logic Voltage - VIL, VIH :
- 1.1V, 1.7V
- Output Current :
- 290 mA
- Rise Time :
- 70 ns
- Driven Configuration :
- High-Side and Low-Side
- Mounting Type :
- Surface Mount
- Number of Drivers :
- 2
- Package Type :
- DSO
- Operating Supply Current :
- 400 uA
- Mounting Style :
- SMD/SMT
- Minimum Operating Temperature :
- - 40 C
- Bridge Type :
- Half Bridge
- Supply Voltage :
- 10 → 20V
- Current - Peak Output (Source, Sink) :
- 290mA, 700mA
- Maximum Operating Temperature :
- + 125 C
- Driver Type :
- High and Low Side
- Input Type :
- Non-Inverting
- Logic Type :
- CMOS, LSTTL
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Driver Configuration :
- Non-Inverting
- Number of Outputs :
- 2 Output
- Typical Operating Supply Voltage :
- 15 V
- Datasheets
- 2ED2101S06FXUMA1

Gate Drivers Infineon Technologies 2ED2101S06FXUMA1 Overview
The Gate Drivers Infineon Technologies 2ED2101S06FXUMA1 is a state-of-the-art level shift driver designed for high-efficiency and reliability in advanced electronic systems. This product by Infineon Technologies stands out for its robust design and optimal performance in handling high voltage transitions. Built on Silicon on Insulator (SOI) technology, it provides excellent electrical insulation and reduced parasitic capacitance, enhancing the overall system performance. Its application spans across various high-demand environments, making it a cornerstone for developing high-performance, scalable electronic architectures. The integration of advanced level shift capabilities in the 2ED2101S06FXUMA1 allows for seamless signal management and enhanced gate driving functionalities, pivotal for modern electronic applications requiring precise control and robust operation.
2ED2101S06FXUMA1 Features
The 2ED2101S06FXUMA1 from Infineon Technologies incorporates multiple features designed for superior electronic control:
- Advanced SOI technology for high insulation and minimal leakage.
- Enhanced level shifting capabilities to manage high voltage transitions effectively.
- Compact design facilitating easy integration into existing and new systems.
- High durability and reliability under extreme conditions.
- Optimized for low power consumption and high efficiency.
2ED2101S06FXUMA1 Applications
- Electric Vehicles: Used in the powertrain systems to manage the high voltage levels between the battery and the motor, ensuring efficient power transmission.
- Renewable Energy Systems: Integral in solar inverters and wind turbine converters, facilitating effective power conversion and grid synchronization.
- Industrial Automation: Enhances the control of high-power industrial machinery by providing reliable gate driving in harsh industrial environments.
- Consumer Electronics: Applied in the power management systems of high-end consumer electronics to ensure stability and efficiency in power handling.
- Data Centers: Utilized in power supply units where stable and efficient power conversion is critical for uninterrupted data center operations.
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