2DD1766P-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Frequency :

220MHz

hFE Min :

82

Case Connection :

COLLECTOR

Vce Saturation (Max) @ Ib, Ic :

800mV @ 200mA, 2A

Length :

4.5mm

Transistor Type :

NPN

Element Configuration :

Single

Polarity/Channel Type :

NPN

Weight :

51.993025mg

Transition Frequency :

220MHz

Max Power Dissipation :

1W

Pin Count :

4

REACH SVHC :

No SVHC

Radiation Hardening :

No

Number of Elements :

1

Mount :

Surface Mount

ECCN Code :

EAR99

Width :

2.48mm

Number of Pins :

4

Collector Emitter Saturation Voltage :

800mV

Height :

1.5mm

Peak Reflow Temperature (Cel) :

260

Collector Base Voltage (VCBO) :

40V

Max Collector Current :

2A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

5V

Published :

2007

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Number of Terminations :

4

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

1μA ICBO

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

32V

DC Current Gain (hFE) (Min) @ Ic, Vce :

82 @ 500mA 3V

Collector Emitter Breakdown Voltage :

32V

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

Max Breakdown Voltage :

32V

Terminal Position :

Dual

Factory Lead Time :

9 Weeks

Terminal Form :

Flat

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-243AA

Transistor Application :

SWITCHING

Gain Bandwidth Product :

220MHz

Power Dissipation :

1W