2DD1766P-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

Height :

1.5mm

Emitter Base Voltage (VEBO) :

5V

Frequency :

220MHz

Power Dissipation :

1W

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Max Breakdown Voltage :

32V

Package / Case :

TO-243AA

Peak Reflow Temperature (Cel) :

260

Transition Frequency :

220MHz

Max Collector Current :

2A

Collector Emitter Voltage (VCEO) :

32V

Radiation Hardening :

No

Pin Count :

4

Width :

2.48mm

Polarity/Channel Type :

NPN

Collector Emitter Saturation Voltage :

800mV

Length :

4.5mm

Collector Base Voltage (VCBO) :

40V

Transistor Type :

NPN

Weight :

51.993025mg

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Case Connection :

COLLECTOR

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Terminal Form :

Flat

Gain Bandwidth Product :

220MHz

Number of Pins :

4

Collector Emitter Breakdown Voltage :

32V

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

DC Current Gain (hFE) (Min) @ Ic, Vce :

82 @ 500mA 3V

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

4

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

800mV @ 200mA, 2A

Terminal Position :

Dual

Max Power Dissipation :

1W

Published :

2007

Transistor Element Material :

SILICON

Factory Lead Time :

9 Weeks

hFE Min :

82

Number of Elements :

1

Current - Collector Cutoff (Max) :

1μA ICBO