2DD1664R-13

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Mfr.Part #
2DD1664R-13
Manufacturer
Diodes Incorporated
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS NPN 32V 1A SOT89-3
Stock
239,268
In Stock :
239,268

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Pbfree Code :
yes
Terminal Form :
Flat
Package / Case :
TO-243AA
Frequency :
280MHz
Time@Peak Reflow Temperature-Max (s) :
40
Base Part Number :
2DD1664
Vce Saturation (Max) @ Ib, Ic :
400mV @ 50mA, 500mA
Case Connection :
COLLECTOR
Max Power Dissipation :
1W
Packaging :
Tape and Reel (TR)
Mount :
Surface Mount
Max Collector Current :
1A
DC Current Gain (hFE) (Min) @ Ic, Vce :
180 @ 100mA 3V
Peak Reflow Temperature (Cel) :
260
Mounting Type :
Surface Mount
Pin Count :
4
Power Dissipation :
1W
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e3
Weight :
51.993025mg
Number of Elements :
1
Transistor Type :
NPN
Operating Temperature :
-55°C~150°C TJ
Collector Emitter Saturation Voltage :
400mV
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gain Bandwidth Product :
280MHz
Width :
2.48mm
Height :
1.5mm
Published :
2013
Factory Lead Time :
19 Weeks
Collector Base Voltage (VCBO) :
40V
REACH SVHC :
No SVHC
Terminal Finish :
Matte Tin (Sn)
Length :
4.5mm
Emitter Base Voltage (VEBO) :
6V
Max Breakdown Voltage :
32V
Transistor Application :
SWITCHING
Collector Emitter Voltage (VCEO) :
32V
Transistor Element Material :
SILICON
Radiation Hardening :
No
Element Configuration :
Single
Collector Emitter Breakdown Voltage :
32V
JESD-30 Code :
R-PSSO-F3
Number of Terminations :
3
Polarity/Channel Type :
NPN
Number of Pins :
4
Current - Collector Cutoff (Max) :
100nA
ECCN Code :
EAR99
Transition Frequency :
280MHz
Datasheets
2DD1664R-13
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated 2DD1664R-13 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-243AA, Base Part Number:2DD1664, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Pins:4, 2DD1664R-13 pinout, 2DD1664R-13 datasheet PDF, 2DD1664R-13 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated 2DD1664R-13 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated 2DD1664R-13


NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount

2DD1664R-13 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 100mA 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 280MHz.Single BJT transistor can take a breakdown input voltage of 32V volts.During maximum operation, collector current can be as low as 1A volts.

2DD1664R-13 Features


the DC current gain for this device is 180 @ 100mA 3V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 280MHz


2DD1664R-13 Applications


There are a lot of Diodes Incorporated
2DD1664R-13 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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