2DC4617R-7
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- Mfr.Part #
- 2DC4617R-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-523
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A SOT523
- Stock
- 1,864
- In Stock ：
- 1,864
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 180MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 1mA 6V
- Number of Elements :
- 1
- Continuous Collector Current :
- 150mA
- Voltage - Rated DC :
- 50V
- Transition Frequency :
- 180MHz
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Operating Temperature :
- -55°C~150°C TJ
- Base Part Number :
- 2DC4617
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 60V
- Power Dissipation :
- 150mW
- hFE Min :
- 180
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- 400mV
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 150mW
- Max Breakdown Voltage :
- 50V
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Width :
- 800μm
- Mount :
- Surface Mount
- Length :
- 1.6mm
- Package / Case :
- SOT-523
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Max Collector Current :
- 150mA
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 50V
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Weight :
- 2.012816mg
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 7V
- Current Rating :
- 150mA
- Height :
- 750μm
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- NPN
- Frequency :
- 180MHz
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 19 Weeks
- Published :
- 2007
- Collector Emitter Voltage (VCEO) :
- 50V
- Datasheets
- 2DC4617R-7
2DC4617R-7 Documents
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-523 Tape & Reel (TR) Surface Mount
2DC4617R-7-F Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 180 @ 1mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 50mA.Single BJT transistor is recommended to keep the continuous collector voltage at 150mA in order to achieve high efficiency.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is 150mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 180MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 150mA volts at Single BJT transistors maximum.
2DC4617R-7-F Features
the DC current gain for this device is 180 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
the current rating of this device is 150mA
a transition frequency of 180MHz
2DC4617R-7-F Applications
There are a lot of Diodes Incorporated
2DC4617R-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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