2DC4617R-7
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- Mfr.Part #
- 2DC4617R-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-523
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A SOT523
- Stock
- 1,864
- In Stock ：
- 1,864
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 150mA
- Weight :
- 2.012816mg
- Power Dissipation :
- 150mW
- hFE Min :
- 180
- Number of Pins :
- 3
- Terminal Position :
- Dual
- Height :
- 750μm
- Published :
- 2007
- Mounting Type :
- Surface Mount
- Width :
- 800μm
- Pin Count :
- 3
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Transistor Type :
- NPN
- Transition Frequency :
- 180MHz
- Collector Base Voltage (VCBO) :
- 60V
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 19 Weeks
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 50V
- Length :
- 1.6mm
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 7V
- Frequency :
- 180MHz
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 50V
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 1mA 6V
- Collector Emitter Voltage (VCEO) :
- 50V
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- 2DC4617
- Continuous Collector Current :
- 150mA
- Collector Emitter Saturation Voltage :
- 400mV
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Package / Case :
- SOT-523
- Max Power Dissipation :
- 150mW
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Terminal Finish :
- Matte Tin (Sn)
- Current Rating :
- 150mA
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Rated DC :
- 50V
- Gain Bandwidth Product :
- 180MHz
- Datasheets
- 2DC4617R-7
2DC4617R-7 Documents
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-523 Tape & Reel (TR) Surface Mount
2DC4617R-7-F Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 180 @ 1mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 50mA.Single BJT transistor is recommended to keep the continuous collector voltage at 150mA in order to achieve high efficiency.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is 150mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 180MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 150mA volts at Single BJT transistors maximum.
2DC4617R-7-F Features
the DC current gain for this device is 180 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
the current rating of this device is 150mA
a transition frequency of 180MHz
2DC4617R-7-F Applications
There are a lot of Diodes Incorporated
2DC4617R-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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