2DC4617R-7
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- Mfr.Part #
- 2DC4617R-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-523
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A SOT523
- Stock
- 1,864
- In Stock ：
- 1,864
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Dual
- Max Power Dissipation :
- 150mW
- Max Breakdown Voltage :
- 50V
- Collector Emitter Breakdown Voltage :
- 50V
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Transistor Type :
- NPN
- Weight :
- 2.012816mg
- Voltage - Rated DC :
- 50V
- Collector Emitter Voltage (VCEO) :
- 50V
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 1mA 6V
- Width :
- 800μm
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Length :
- 1.6mm
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 150mA
- Power Dissipation :
- 150mW
- Continuous Collector Current :
- 150mA
- Collector Base Voltage (VCBO) :
- 60V
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 400mV
- Gain Bandwidth Product :
- 180MHz
- Emitter Base Voltage (VEBO) :
- 7V
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Height :
- 750μm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Published :
- 2007
- hFE Min :
- 180
- Element Configuration :
- Single
- Current Rating :
- 150mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Terminal Finish :
- Matte Tin (Sn)
- Factory Lead Time :
- 19 Weeks
- Polarity/Channel Type :
- NPN
- Package / Case :
- SOT-523
- Frequency :
- 180MHz
- Terminal Form :
- Gull wing
- Base Part Number :
- 2DC4617
- Transition Frequency :
- 180MHz
- Datasheets
- 2DC4617R-7
2DC4617R-7 Documents
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-523 Tape & Reel (TR) Surface Mount
2DC4617R-7-F Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 180 @ 1mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 50mA.Single BJT transistor is recommended to keep the continuous collector voltage at 150mA in order to achieve high efficiency.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is 150mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 180MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 150mA volts at Single BJT transistors maximum.
2DC4617R-7-F Features
the DC current gain for this device is 180 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
the current rating of this device is 150mA
a transition frequency of 180MHz
2DC4617R-7-F Applications
There are a lot of Diodes Incorporated
2DC4617R-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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