2DC4617R-7
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- Mfr.Part #
- 2DC4617R-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-523
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A SOT523
- Stock
- 1,864
- In Stock ：
- 1,864
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 50V
- Pbfree Code :
- yes
- Factory Lead Time :
- 19 Weeks
- Max Collector Current :
- 150mA
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- 60V
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 1mA 6V
- Continuous Collector Current :
- 150mA
- Emitter Base Voltage (VEBO) :
- 7V
- Collector Emitter Voltage (VCEO) :
- 50V
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Base Part Number :
- 2DC4617
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Length :
- 1.6mm
- Width :
- 800μm
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 750μm
- Package / Case :
- SOT-523
- Weight :
- 2.012816mg
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 50V
- Pin Count :
- 3
- Gain Bandwidth Product :
- 180MHz
- Published :
- 2007
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Rated DC :
- 50V
- Transition Frequency :
- 180MHz
- Number of Terminations :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- Max Power Dissipation :
- 150mW
- Collector Emitter Saturation Voltage :
- 400mV
- Frequency :
- 180MHz
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Power Dissipation :
- 150mW
- Current Rating :
- 150mA
- hFE Min :
- 180
- Datasheets
- 2DC4617R-7
2DC4617R-7 Documents
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-523 Tape & Reel (TR) Surface Mount
2DC4617R-7-F Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 180 @ 1mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 50mA.Single BJT transistor is recommended to keep the continuous collector voltage at 150mA in order to achieve high efficiency.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is 150mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 180MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 150mA volts at Single BJT transistors maximum.
2DC4617R-7-F Features
the DC current gain for this device is 180 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
the current rating of this device is 150mA
a transition frequency of 180MHz
2DC4617R-7-F Applications
There are a lot of Diodes Incorporated
2DC4617R-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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