1SV308,L3F

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Mfr.Part #
1SV308,L3F
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
SC-79, SOD-523
Datasheet
Download
Description
RF DIODE PIN 30V ESC
Stock
6,336
In Stock :
6,336

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Diodes - RF
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Elements :
1
Packaging :
Tape and Reel (TR)
Capacitance @ Vr, F :
0.5pF @ 1V 1MHz
Diode Type :
PIN - Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
HTS Code :
8541.10.00.80
Voltage - Peak Reverse (Max) :
30V
ECCN Code :
EAR99
Published :
2014
RoHS Status :
RoHS Compliant
Package / Case :
SC-79, SOD-523
Terminal Form :
Flat
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
12 Weeks
Frequency Band :
VERY HIGH FREQUENCY
Diode Capacitance-Max :
0.5pF
Operating Temperature :
125°C TJ
JESD-30 Code :
R-PDSO-F2
Resistance @ If, F :
1.5Ohm @ 10mA 100MHz
Number of Terminations :
2
Breakdown Voltage-Min :
30V
Application :
SWITCHING
Terminal Position :
Dual
Diode Element Material :
SILICON
Mount :
Surface Mount
Current - Max :
50mA
Datasheets
1SV308,L3F
Introducing Diodes - RF Toshiba Electronic Devices and Storage Corporation 1SV308,L3F from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SC-79, SOD-523, Operating Temperature:125°C TJ, Number of Terminations:2, 1SV308,L3F pinout, 1SV308,L3F datasheet PDF, 1SV308,L3F amp .Beyond Diodes - RF Toshiba Electronic Devices and Storage Corporation 1SV308,L3F ,we also offer SMP1330-005LF, SMS3923-081LF, MA4P7438-287T, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation 1SV308,L3F


PIN - Single 0.5pF @ 1V 1MHz 125°C TJ 2 Terminations SILICON NOT SPECIFIED DUAL Tape & Reel (TR) SC-79, SOD-523

1SV308,L3F Overview


This device is designed to operate from the maximal current of 50mA.In accordance with the applicable device specifications, this device operates at a maximum peak reverse voltage of 30V.Occasionally, this device may run at its lowest possible breakdown voltage of 30V.

1SV308,L3F Features


from a maximum current of 50mA volts
at its lowest breakdown voltage of 30V


1SV308,L3F Applications


There are a lot of Toshiba Semiconductor and Storage
1SV308,L3F applications of RF diodes.


  • Sensor interfaces of security systems
  • Telematic systems
  • Compensators
  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
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