1SS306TE85LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Diodes - Rectifiers - Arrays

Reverse Recovery Time :

60 ns

Number of Pins :

4

Factory Lead Time :

11 Weeks

Peak Reverse Current :

1μA

Output Current-Max :

0.1A

Min Operating Temperature :

-55°C

Current - Reverse Leakage @ Vr :

1μA @ 200V

Number of Elements :

2

Forward Voltage :

900mV

Width :

1.5mm

Max Reverse Voltage (DC) :

200V

Terminal Form :

Gull wing

Voltage - Forward (Vf) (Max) @ If :

1.2V @ 100mA

RoHS Status :

RoHS Compliant

Average Rectified Current :

100mA

Max Forward Surge Current (Ifsm) :

2A

Packaging :

Cut Tape (CT)

Max Repetitive Reverse Voltage (Vrrm) :

250V

Forward Current :

100mA

Max Operating Temperature :

125°C

Number of Terminations :

4

Mounting Type :

Surface Mount

Diode Element Material :

SILICON

Diode Type :

Standard

Operating Temperature - Junction :

125°C Max

Terminal Position :

Dual

Published :

2009

Mount :

Surface Mount

Reach Compliance Code :

Unknown

Peak Non-Repetitive Surge Current :

2A

Diode Configuration :

2 Independent

Max Surge Current :

2A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Length :

2.9mm

Max Power Dissipation :

150mW

Element Configuration :

Single

Package / Case :

SC-61AA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Height :

1.1mm

Recovery Time :

30 ns

Speed :

Small Signal =< 200mA (Io), Any Speed