1N5829

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Single

RoHS Status :

RoHS Compliant

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Mount :

Chassis, Stud

Pbfree Code :

yes

Published :

2013

Case Connection :

CATHODE

Max Surge Current :

400A

Terminal Position :

UPPER

Mounting Type :

Chassis, Stud Mount

Max Operating Temperature :

150°C

Natural Thermal Resistance :

1.8 °C/W

Number of Terminations :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Application :

Power

Base Part Number :

1N5829

Min Operating Temperature :

-55°C

Voltage - Forward (Vf) (Max) @ If :

580mV @ 25A

JESD-30 Code :

O-MUPM-D1

Package / Case :

DO-203AA, DO-4, Stud

Current - Reverse Leakage @ Vr :

2mA @ 20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Average Rectified Current :

25A

Factory Lead Time :

10 Weeks

Diode Element Material :

SILICON

Max Reverse Leakage Current :

1μA

Forward Current :

25A

Terminal Form :

Solder Lug

Element Configuration :

Single

Lifecycle Status :

Production (Last Updated: 5 months ago)

Max Reverse Voltage (DC) :

20V

Diode Type :

Schottky

Number of Elements :

1

Forward Voltage :

580mV

Number of Phases :

1

Max Repetitive Reverse Voltage (Vrrm) :

20V

Operating Temperature - Junction :

-55°C~150°C

Peak Reverse Current :

1A

Packaging :

Bulk