1N5817-B

Manufacturer :

Diodes Incorporated

Product Category :

Diodes - Rectifiers - Single

Peak Reflow Temperature (Cel) :

260

Operating Temperature - Junction :

-65°C~125°C

JESD-609 Code :

e3

Diode Element Material :

SILICON

Contact Plating :

Tin

Width :

2.72mm

Time@Peak Reflow Temperature-Max (s) :

40

Height :

2.72mm

Terminal Form :

Wire

Base Part Number :

1N5817

Element Configuration :

Single

Average Rectified Current :

1A

Current - Reverse Leakage @ Vr :

1mA @ 20V

Number of Pins :

2

Pin Count :

2

Voltage - Forward (Vf) (Max) @ If :

750mV @ 3A

Forward Current :

1A

Additional Feature :

LOW POWER LOSS, FREE WHEELING DIODE

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Packaging :

Bulk

Forward Voltage :

750mV

Max Forward Surge Current (Ifsm) :

25A

Mount :

Through Hole

Peak Non-Repetitive Surge Current :

25A

Max Repetitive Reverse Voltage (Vrrm) :

20V

Number of Terminations :

2

Number of Elements :

1

Factory Lead Time :

14 Weeks

Min Operating Temperature :

-65°C

Pbfree Code :

No

Length :

5.21mm

Package / Case :

DO-204AL, DO-41, Axial

Max Operating Temperature :

125°C

Mounting Type :

Through Hole

Peak Reverse Current :

1mA

Max Reverse Voltage (DC) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Capacitance @ Vr, F :

110pF @ 4V 1MHz

Radiation Hardening :

No

HTS Code :

8541.10.00.80

Output Current-Max :

1A

Weight :

310.002035mg

Published :

2006

ECCN Code :

EAR99

Case Connection :

Isolated

Diode Type :

Schottky

RoHS Status :

ROHS3 Compliant