1N5811US

Manufacturer :

Microchip Technology

Product Category :

Diodes - Rectifiers - Single

Capacitance @ Vr, F :

60pF @ 10V 1MHz

Terminal Form :

WRAP AROUND

Peak Non-Repetitive Surge Current :

125A

Pin Count :

2

Reverse Recovery Time :

30 ns

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Number of Elements :

1

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Forward Voltage :

875mV

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Contact Plating :

Lead, Tin

Packaging :

Bulk

Output Current-Max :

3A

Operating Temperature - Junction :

-65°C~175°C

Lead Free :

Contains Lead

Natural Thermal Resistance :

52 °C/W

Diode Type :

Standard

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Package / Case :

SQ-MELF, B

Terminal Position :

END

Published :

1997

Voltage - Forward (Vf) (Max) @ If :

875mV @ 4A

Peak Reverse Current :

5μA

Element Configuration :

Single

Average Rectified Current :

3A

Max Reverse Voltage (DC) :

150V

Additional Feature :

HIGH RELIABILITY, METALLURGICALLY BONDED

Factory Lead Time :

7 Weeks

Terminal Finish :

Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier

Pbfree Code :

No

Application :

ULTRA FAST RECOVERY

RoHS Status :

Non-RoHS Compliant

Reach Compliance Code :

not_compliant

Number of Phases :

1

Radiation Hardening :

yes

Max Operating Temperature :

175°C

Max Repetitive Reverse Voltage (Vrrm) :

150V

JESD-609 Code :

e0

Case Connection :

Isolated

Forward Current :

6A

Number of Terminations :

2

Mounting Type :

Surface Mount

Number of Pins :

2

HTS Code :

8541.10.00.80

Min Operating Temperature :

-65°C

Current - Reverse Leakage @ Vr :

5µA @ 50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Diode Element Material :

SILICON