1N5809US

Manufacturer :

Microchip Technology

Product Category :

Diodes - Rectifiers - Single

Diode Element Material :

SILICON

Radiation Hardening :

yes

Max Operating Temperature :

175°C

Capacitance @ Vr, F :

60pF @ 10V 1MHz

Application :

ULTRA FAST RECOVERY

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

ECCN Code :

EAR99

Reverse Recovery Time :

30 ns

Mount :

Surface Mount

Published :

1997

JESD-609 Code :

e0

Voltage - Forward (Vf) (Max) @ If :

875mV @ 4A

Number of Phases :

1

Min Operating Temperature :

-65°C

Number of Elements :

1

Pbfree Code :

No

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature - Junction :

-65°C~175°C

Number of Pins :

2

Number of Terminations :

2

RoHS Status :

Non-RoHS Compliant

Terminal Form :

WRAP AROUND

Package / Case :

SQ-MELF, B

Peak Non-Repetitive Surge Current :

125A

Factory Lead Time :

7 Weeks

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Max Reverse Voltage (DC) :

100V

Pin Count :

2

Current - Reverse Leakage @ Vr :

5µA @ 100V

Average Rectified Current :

3A

Mounting Type :

Surface Mount

Additional Feature :

HIGH RELIABILITY, METALLURGICALLY BONDED

Peak Reverse Current :

5μA

Output Current-Max :

3A

Lead Free :

Contains Lead

Case Connection :

Isolated

Terminal Position :

END

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Diode Type :

Standard

Forward Current :

6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Forward Voltage :

875mV

Packaging :

Bulk

Reach Compliance Code :

not_compliant

Max Repetitive Reverse Voltage (Vrrm) :

100V

HTS Code :

8541.10.00.80

Terminal Finish :

Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier