1N5809E3/TR

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Mfr.Part #
1N5809E3/TR
Manufacturer
Microchip Technology
Package / Case
Datasheet
Download
Description
RECTIFIER UFR,FRR
Stock
12,531
In Stock :
12,531

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Manufacturer :
Microchip Technology
Product Category :
Diodes - Rectifiers - Single
Peak Reverse Repetitive Voltage (V) :
100
Diameter :
3.61(Max)
Maximum DC Reverse Voltage (V) :
110
Supplier Temperature Grade :
COMMERCIAL
Peak Non-Repetitive Surge Current (A) :
125
Mounting :
Through Hole
Peak Forward Voltage (V) :
0.875@4A
PCB changed :
2
Peak Reverse Recovery Time (ns) :
30
Maximum Continuous Forward Current (A) :
6
ECCN (US) :
EAR99
Pin Count :
2
Maximum Operating Temperature (°C) :
175
Military :
No
RoHS Status :
Yes with exemptions
Configuration :
Single
Minimum Operating Temperature (°C) :
-65
Package Length :
7.62(Max)
Supplier Package :
Case B
Type :
Switching Diode
Peak Reverse Current (uA) :
5
Datasheets
1N5809E3/TR
Introducing Diodes - Rectifiers - Single Microchip Technology 1N5809E3/TR from Chip IC,where excellence meets affordability. This product stands out with its Type:Switching Diode, 1N5809E3/TR pinout, 1N5809E3/TR datasheet PDF, 1N5809E3/TR amp .Beyond Diodes - Rectifiers - Single Microchip Technology 1N5809E3/TR ,we also offer BAT54,235, BAT54,215, BAS16L,315, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology 1N5809E3/TR




1N5809E3/TR Overview


Datasheets indicate 0.875@4A as the peak forward voltage.RF diode consumes about 6 continuous forward current at any given time.RF diode must be operated wRF diodeh a DC reverse voltage less than 110 V.

1N5809E3/TR Features


the forward peak voltage is 0.875@4A


1N5809E3/TR Applications


There are a lot of Microsemi
1N5809E3/TR applications of RF diodes.


  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
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