1N5809E3

Manufacturer :

Microchip Technology

Product Category :

Diodes - Rectifiers - Single

Maximum DC Reverse Voltage (V) :

110

RoHS Status :

Yes with exemptions

Output Current-Max :

3 A

Technology :

Avalanche

Diode Type :

RECTIFIER DIODE

Peak Reverse Recovery Time (ns) :

30

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Phases :

1

Package Shape :

Round

Terminal Position :

Axial

Configuration :

Single

Non-rep Pk Forward Current-Max :

125 A

Mounting :

Through Hole

Terminal Form :

Wire

Manufacturer :

Microsemi Corporation

Pbfree Code :

yes

Peak Reverse Current (uA) :

5

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Surface Mount :

No

JESD-609 Code :

e3

Supplier Package :

Case B

Supplier Temperature Grade :

COMMERCIAL

Package Length :

7.62(Max)

Diode Element Material :

SILICON

Maximum Continuous Forward Current (A) :

6

Case Connection :

Isolated

Minimum Operating Temperature (°C) :

-65

Reverse Recovery Time-Max :

0.03 μs

Number of Terminals :

2

Reach Compliance Code :

Compliant

Application :

ULTRA FAST RECOVERY POWER

Packaging :

Bag

ECCN (US) :

EAR99

Type :

Switching Diode

JESD-30 Code :

O-LALF-W2

Reverse Current-Max :

5 µA

HTS :

8541.10.00.80

Diameter :

3.61(Max)

Additional Feature :

High Reliability

ECCN Code :

EAR99

Peak Forward Voltage (V) :

0.875@4A

HTS Code :

8541.10.00.80

Pin Count :

2

Peak Reverse Repetitive Voltage (V) :

100

Rep Pk Reverse Voltage-Max :

100 V

AEC Qualified :

No

Maximum Operating Temperature (°C) :

175

Peak Non-Repetitive Surge Current (A) :

125

Number of Elements :

1

PCB changed :

2