1N5610
- Mfr.Part #
- 1N5610
- Manufacturer
- Microchip Technology
- Package / Case
- G, Axial
- Datasheet
- Download
- Description
- TVS DIODE 30.5VWM 47.6VC G AXIAL
- Stock
- 49,561
- In Stock :
- 49,561
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- * Fullname:
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- Manufacturer :
- Microchip Technology
- Product Category :
- Radiation Hardening :
- yes
- Series :
- -
- Peak Pulse Current :
- 32 A
- Additional Feature :
- HIGH RELIABILITY, METALLURGICALLY BONDED
- Power Dissipation-Max :
- 3 W
- Product Status :
- Discontinued at Digi-Key
- Test Current :
- 1 mA
- Voltage - Reverse Standoff (Typ) :
- 30.5V
- Peak Pulse Power :
- 1.5 kW
- Terminal Position :
- Axial
- Case Connection :
- Isolated
- Voltage - Clamping (Max) @ Ipp :
- 47.6V
- Package :
- Bulk
- JESD-30 Code :
- O-LALF-W2
- Breakdown Voltage-Min :
- 33 V
- ECCN Code :
- EAR99
- Max Reverse Leakage Current :
- 5 µA
- Polarity :
- Unidirectional
- Configuration :
- Single
- Max Operating Temperature :
- 175 °C
- Lifecycle Status :
- Production (Last Updated: 2 months ago)
- Type :
- Zener
- Unidirectional Channels :
- 1
- Applications :
- GENERAL PURPOSE
- Terminal Finish :
- Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier
- Diode Type :
- TRANS VOLTAGE SUPPRESSOR DIODE
- Direction :
- Unidirectional
- Reach Compliance Code :
- Unknown
- RoHS :
- Compliant
- Power Line Protection :
- No
- Capacitance @ Frequency :
- -
- Element Configuration :
- Single
- Reverse Standoff Voltage :
- 30.5 V
- Supplier Device Package :
- G, Axial
- Reverse Breakdown Voltage :
- 33 V
- Mounting Type :
- Through Hole
- Power - Peak Pulse :
- 1500W (1.5kW)
- Number of Pins :
- 2
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Rep Pk Reverse Voltage-Max :
- 30.5 V
- Schedule B :
- 8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/8541100080/85
- Min Operating Temperature :
- -55 °C
- Terminal Form :
- Wire
- Voltage - Breakdown (Min) :
- 33V
- Number of Elements :
- 1
- Package Shape :
- Round
- Leakage Current :
- 5 µA
- Number of Terminals :
- 2
- Surface Mount :
- No
- HTS Code :
- 8541.10.00.50
- Min Breakdown Voltage :
- 33 V
- Pin Count :
- 2
- Pbfree Code :
- No
- Diode Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e0
- Non-rep Peak Rev Power Dis-Max :
- 1500 W
- Package / Case :
- G, Axial
- Clamping Voltage :
- 47.6 V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Datasheets
- 1N5610

1N5610 datasheet pdf and TVS - Diodes product details from Microchip stock available at Xinshop
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