15C01C-TB-E

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Mfr.Part #
15C01C-TB-E
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 15V 0.7A 3CP
Stock
505
In Stock :
505

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Lead Free :
Lead Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector Cutoff (Max) :
100nA ICBO
Packaging :
Tape and Reel (TR)
Vce Saturation (Max) @ Ib, Ic :
300mV @ 10mA, 200mA
Operating Temperature :
150°C TJ
ECCN Code :
EAR99
Collector Emitter Voltage (VCEO) :
300mV
RoHS Status :
ROHS3 Compliant
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Factory Lead Time :
7 Weeks
Collector Emitter Breakdown Voltage :
15V
Pbfree Code :
yes
Max Power Dissipation :
300mW
Emitter Base Voltage (VEBO) :
5V
Frequency - Transition :
330MHz
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Pin Count :
3
Transistor Type :
NPN
JESD-609 Code :
e6
Published :
2012
Number of Pins :
3
Max Collector Current :
700mA
Power - Max :
300mW
Mounting Type :
Surface Mount
hFE Min :
300
Package / Case :
TO-236-3, SC-59, SOT-23-3
Collector Base Voltage (VCBO) :
20V
DC Current Gain (hFE) (Min) @ Ic, Vce :
300 @ 10mA 2V
Datasheets
15C01C-TB-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 15C01C-TB-E from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Number of Pins:3, Mounting Type:Surface Mount, Package / Case:TO-236-3, SC-59, SOT-23-3, 15C01C-TB-E pinout, 15C01C-TB-E datasheet PDF, 15C01C-TB-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 15C01C-TB-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 15C01C-TB-E


NPN 150°C TJ 100nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

15C01C-TB-E Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 10mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 10mA, 200mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Collector current can be as low as 700mA volts at its maximum.

15C01C-TB-E Features


the DC current gain for this device is 300 @ 10mA 2V
the vce saturation(Max) is 300mV @ 10mA, 200mA
the emitter base voltage is kept at 5V


15C01C-TB-E Applications


There are a lot of ON Semiconductor
15C01C-TB-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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