ZXTP19100CGTA
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- Mfr.Part #
- ZXTP19100CGTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 2A SOT223-3
- Stock
- 7,881
- In Stock ：
- 7,881
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 2A
- Emitter Base Voltage (VEBO) :
- -7V
- Height :
- 1.65mm
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Length :
- 6.7mm
- Number of Pins :
- 4
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 100V
- JESD-609 Code :
- e3
- Published :
- 2008
- Factory Lead Time :
- 15 Weeks
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 5.3W
- Collector Emitter Saturation Voltage :
- -130mV
- Continuous Collector Current :
- -2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Base Part Number :
- ZXTP19100C
- Collector Base Voltage (VCBO) :
- 110V
- Transistor Application :
- SWITCHING
- Case Connection :
- COLLECTOR
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 3.7mm
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-261-4, TO-261AA
- Vce Saturation (Max) @ Ib, Ic :
- 295mV @ 200mA, 2A
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Position :
- Dual
- Power - Max :
- 3W
- Collector Emitter Voltage (VCEO) :
- 100V
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 142MHz
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 100V
- Pin Count :
- 4
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 4
- Frequency :
- 142MHz
- Lead Free :
- Lead Free
- Weight :
- 7.994566mg
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Transition Frequency :
- 142MHz
- Power Dissipation :
- 5.3W
- Datasheets
- ZXTP19100CGTA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTP19100CGTA Overview
This device has a DC current gain of 200 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -130mV.A VCE saturation (Max) of 295mV @ 200mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -7V.As you can see, the part has a transition frequency of 142MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 2A volts is possible.
ZXTP19100CGTA Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -130mV
the vce saturation(Max) is 295mV @ 200mA, 2A
the emitter base voltage is kept at -7V
a transition frequency of 142MHz
ZXTP19100CGTA Applications
There are a lot of Diodes Incorporated
ZXTP19100CGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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