ZXMP3A17DN8TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Voltage - Rated DC :

-30V

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

70m Ω @ 3.2A, 10V

Gate Charge (Qg) (Max) @ Vgs :

8.28nC @ 5V

Length :

5mm

Published :

2006

REACH SVHC :

No SVHC

Fall Time (Typ) :

8.72 ns

JESD-609 Code :

e3

Number of Pins :

8

Resistance :

70mOhm

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Current Rating :

-4.4A

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Radiation Hardening :

No

Factory Lead Time :

12 Weeks

Vgs(th) (Max) @ Id :

1V @ 250μA

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

630pF @ 15V

Continuous Drain Current (ID) :

4.4A

Rise Time :

2.87ns

Pin Count :

8

Current - Continuous Drain (Id) @ 25°C :

4.4A Ta

FET Type :

2 P-Channel (Dual)

ECCN Code :

EAR99

Width :

4mm

Number of Terminations :

8

Max Power Dissipation :

2.1W

Transistor Application :

SWITCHING

Turn-Off Delay Time :

29.2 ns

Terminal Finish :

Matte Tin (Sn)

Drain Current-Max (Abs) (ID) :

3.4A

Weight :

73.992255mg

Height :

1.5mm

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

1.74 ns

FET Feature :

Standard

Power Dissipation :

2.1W