ZXMN3A06DN8TA
- Mfr.Part #
- ZXMN3A06DN8TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET 2N-CH 30V 4.9A 8-SOIC
- Stock
- 147
- In Stock :
- 147
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Factory Lead Time :
- 17 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 2.1W
- Length :
- 5mm
- Turn On Delay Time :
- 3 ns
- Lead Free :
- Lead Free
- Nominal Vgs :
- 1 V
- Rise Time :
- 6.4ns
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 9A, 10V
- Pbfree Code :
- yes
- Terminal Finish :
- Matte Tin (Sn)
- Continuous Drain Current (ID) :
- 6.2A
- Pin Count :
- 8
- Power Dissipation :
- 2.1W
- FET Feature :
- Logic Level Gate
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Element Configuration :
- Dual
- Number of Channels :
- 2
- Current Rating :
- 4.8A
- FET Type :
- 2 N-Channel (Dual)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 4.9A
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Power - Max :
- 1.8W
- Published :
- 2006
- Turn-Off Delay Time :
- 21.6 ns
- Threshold Voltage :
- 1V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gate to Source Voltage (Vgs) :
- 20V
- Drain Current-Max (Abs) (ID) :
- 4.9A
- Vgs(th) (Max) @ Id :
- 1V @ 250μA (Min)
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Width :
- 4mm
- Resistance :
- 35mOhm
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Number of Terminations :
- 8
- Mounting Type :
- Surface Mount
- Weight :
- 73.992255mg
- Gate Charge (Qg) (Max) @ Vgs :
- 17.5nC @ 10V
- Fall Time (Typ) :
- 9.4 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance (Ciss) (Max) @ Vds :
- 796pF @ 25V
- Dual Supply Voltage :
- 30V
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Termination :
- SMD/SMT
- Number of Pins :
- 8
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Number of Elements :
- 2
- Drain to Source Breakdown Voltage :
- 30V
- Height :
- 1.5mm
- Terminal Form :
- Gull wing
- Datasheets
- ZXMN3A06DN8TA

ZXMN3A06DN8TA datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Diodes Incorporated stock available at
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